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參數(shù)資料
| 型號： | M27C1001-12B1X |
| 廠商： | 意法半導體 |
| 英文描述： | 1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
| 中文描述： | 1兆位存儲器的128KB x8紫外線和OTP存儲器 |
| 文件頁數(shù)： | 7/17頁 |
| 文件大?。?/td> | 159K |
| 代理商： | M27C1001-12B1X |
7/17
M27C1001
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. Programming Mode AC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
V
IL
≤
V
IN
≤
V
IH
±10
μA
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400μA
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Test Condition
Min
Max
Unit
t
AVPL
t
AS
Address Valid to Program Low
2
μs
t
QVPL
t
DS
Input Valid to Program Low
2
μs
t
VPHPL
t
VPS
V
PP
High to Program Low
2
μs
t
VCHPL
t
VCS
V
CC
High to Program Low
2
μs
t
ELPL
t
CES
Chip Enable Low to Program Low
2
μs
t
PLPH
t
PW
Program Pulse Width
95
105
μs
t
PHQX
t
DH
Program High to Input Transition
2
μs
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μs
t
GLQV
t
OE
Output Enable Low to Output Valid
100
ns
t
GHQZ
(2)
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address
Transition
0
ns
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27C1001 are in the '1'
state. Data is introduced by selectively program-
ming '0's into the desired bit locations. Although
only '0's will be programmed, both '1's and '0's can
be present in the data word. The only way to
change a '0' to a '1' is by die exposition to ultravio-
let light (UV EPROM). The M27C1001 is in the
programming mode when V
PP
input is at 12.75V,
E is at V
IL
and P is pulsed to V
IL
. The data to be
programmed is applied to 8 bits in parallel to the
data output pins. The levels required for the ad-
dress and data inputs are TTL. V
CC
is specified to
be 6.25V ± 0.25V.
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| M27C1001-12B3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
| M27C1001-12B3X | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
| M27C1001-12B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
| M27C1001-12B6X | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
| M27C1001-12BTR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM |
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