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參數(shù)資料
| 型號(hào)： | L9230-DIE1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SPI CONTROLLED H-BRIDGE |
| 中文描述： | 可控的SPI H橋 |
| 文件頁數(shù)： | 21/25頁 |
| 文件大?。?/td> | 218K |
| 代理商： | L9230-DIE1 |
21/25
L9230
Figure 12. Application examples for Overvoltage- and Reverse-Voltage Protection
ESD-SOLIDITY
The connection pins of the IC have to be protected against Electrostatic Discharge ESD) by suitable integrated
protection structures.
The integrated circuit has to meet the demand of the Human-Body-Model“ with V
C
= ± 4kV
C = 100pF and R2 = 1,5k
(330
for OUT1 and OUT2).
Thereby any defect or destruction of the integrated circuit must not occur.
The protection structures realized to reach the ESD-strength have to be coordinated.
The ESD-strength has to be verified by the test circuit given as below.
Figure 13.
For the Pins 4, 5, 6, 7, 14 and 15
U
C
= + 4kV
R
1
= 100k
R
2
= 330
C = 100pF
Number of pulses each pin: 18
Frequency: 1Hz
Arrangement and performance:
The requirements of MIL883D Methode 3015 have to be fulfilled.
H-BRIDGE
H-BRIDGE
Version 1 REVERSE POLARITY PROTECTION VIA MAIN RELAIS
Version 2 REVERSE POLARITY PROTECTION VIA ACTIVE DIODE
MAIN
RELAIS
IGNITION
SWITCH
BATTERY
BATTERY
V
S
V
S
V
S
< 40V
V
S
< 40V
D01AT483
=
V
R1
R2
S2
S1
C
OUT
U
S
S3
(1)
DC-
VOLTMETER
(2)
D01AT484
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