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參數(shù)資料
| 型號(hào)： | L6590N |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | FULLY INTEGRATED POWER SUPPLY FIPS |
| 中文描述： | 完全集成的電源符合FIPS |
| 文件頁數(shù)： | 4/19頁 |
| 文件大?。?/td> | 236K |
| 代理商： | L6590N |
L6590A
4/19
ELECTRICAL CHARACTERISTCS
(T
j
= -25 to 125°C, V
cc
= 10V; unless otherwise specified))
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
POWER SECTION
V
(BR)DSS
Drain Source Voltage
I
d
< 200 μA; T
j
= 25 °C
700
V
I
dss
Off state drain current
V
ds
= 560V; T
j
= 125 °C
200
μA
R
DS(on)
Drain-to-Source on resistance
R
DS(on)
vs. T
j
: see fig. 17
I
d
= 120mA; T
j
= 25 °C
13
16
I
d
= 120mA; T
j
= 125 °C
23
28
PWM CONTROL INPUT
V
COMPH
Vout High
I
source
= -0.5mA
3.8
4.5
V
I
COMP
Source Current
1.5V < V
COMP
< 3.5V
-0.5
-1
-2.5
mA
R
COMP
Dynamic Resistance
1.5V < V
COMP
< 3.5V
9
k
OSCILLATOR SECTION
F
osc
Oscillator Frequency
T
j
= 25 °C
58
65
72
kHz
52
65
74
D
min
Min. Duty Cycle
V
COMP
= 1V
0
%
D
max
Max. Duty Cycle
V
COMP
= 4V
67
70
73
%
DEVICE OPERATION SECTION
I
op
Operating Supply Current
fsw = Fosc
4.5
7
mA
I
Q
Quiescent Current
MOS disabled
3.5
6
mA
I
charge
V
CC
charge Current
V
cc
= 0V to V
ccon
- 0.5V;
V
ds
= 100 to 400V; T
j
= 25°C
-3
-4.5
-7
mA
V
cc
= 0V to V
ccon
- 0.5V;
V
ds
= 100 to 400V
-2.5
-4.5
-7.5
mA
V
CCclamp
V
CC
Clamp Voltage
I
clamp
= 10mA (*)
15.5
16.5
17.5
V
V
ccon
Start Threshold
voltage
(*)
13.5
14.5
15.5
V
V
ccoff
Min operating voltage after Turn
on
(*)
6
6.6
7.2
V
V
dsmin
Drain start voltage
40
V
CIRCUIT PROTECTIONS
I
pklim
Pulse-by-pulse Current Limit
di/dt = 120 mA/ μs
550
625
700
mA
V
ccOVP
Overvoltage Protection
I
cc
= 10 mA (*)
15
16
17
V
LEB
Masking Time
After MOSFET turn-on (**)
120
ns
STANDBY SECTION
F
SB
Oscillator Frequency
19
22
25
kHz
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