- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374355 > KM44C4104C (SAMSUNG SEMICONDUCTOR CO. LTD.) 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) PDF資料下載
參數(shù)資料
| 型號： | KM44C4104C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| 中文描述： | 4米× 4位的擴展數(shù)據(jù)輸出的CMOS動態(tài)RAM（4米× 4位的CMOS動態(tài)隨機存儲器（帶擴展數(shù)據(jù)輸出）） |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 366K |
| 代理商： | KM44C4104C |
KM44C4004C, KM44C4104C
KM44V4004C, KM44V4104C
CMOS DRAM
This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K
Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this
family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh
operation is available in L-version.
This 4Mx4 EDO DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low power consump-
tion and high reliability. It may be used as main memory unit for high level computer, microcomputer and personal computer.
Part Identification
- KM44C4004C/C-L (5V, 4K Ref.)
- KM44C4104C/C-L (5V, 2K Ref.)
- KM44V4004C/C-L (3.3V, 4K Ref.)
- KM44V4104C/C-L (3.3V, 2K Ref.)
Extended Data Out Mode operation
(Fast Page Mode with Extended Data Out)
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
Fast parallel test mode capability
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
Single +5V
±
10% power supply (5V product)
Single +3.3V
±
0.3V power supply (3.3V product)
Control
Clocks
RAS
CAS
W
Vcc
Vss
DQ0
to
DQ3
A0-A11
(A0 - A10)
*1
A0 - A9
(A0 - A10)
*1
Memory Array
4,194,304 x4
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
L-ver
C4004C
V4004C
C4104C
V4104C
5V
3.3V
5V
3.3V
4K
64ms
128ms
2K
32ms
Performance Range
t
RAC
-5
50ns
-6
60ns
Speed
t
CAC
15ns
17ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
Remark
5V/3.3V
5V/3.3V
Active Power Dissipation
Speed
3.3V
5V
4K
324
288
2K
396
360
4K
495
440
2K
605
550
-5
-6
Unit : mW
S
Data out
Buffer
Data in
Buffer
OE
Note)
*1
: 2K Refresh
Col. Address Buffer
Row Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
Column Decoder
Row Decoder
VBB Generator
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44C4004C | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44V4004C | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44V4104C | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| KM44S16030B | 4M x 4Bit x 4 Banks Synchronous DRAM(4M x 4位 x 4組同步動態(tài)RAM) |
| KM44S16030C | 4M x 4Bit x 4 Banks Synchronous DRAM(4M x 4位 x 4組同步動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44C4105C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
| KM44L16031BT-GFZ/Y/0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
| KM44L32031BT-G(F)0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
| KM44L32031BT-G(F)Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
| KM44L32031BT-G(F)Z | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
發(fā)布緊急采購，3分鐘左右您將得到回復。