參數(shù)資料
型號(hào): K4F170411C-B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
中文描述: 4米× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁面模式
文件頁數(shù): 2/20頁
文件大?。?/td> 225K
代理商: K4F170411C-B
K4F170411C, K4F160411C
K4F170412C, K4F160412C
CMOS DRAM
V
CC
DQ0
DQ1
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ3
DQ2
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
PIN CONFIGURATION
(Top Views)
Pin Name
Pin Function
A0 - A11
Address Inputs (4K Product)
A0 - A10
Address Inputs (2K Product)
DQ0 - 3
Data In/Out
V
SS
Ground
RAS
Row Address Strobe
CAS
Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
V
CC
Power(+5V)
Power(+3.3V)
N.C
No Connection (2K Ref. product)
V
CC
DQ0
DQ1
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ3
DQ2
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
*A11 is N.C for K4F160411(2)C (5V/3.3V,
2K Ref.
product)
B : 300mil 26(24) SOJ
F : 300mil 26(24) TSOP II
K4F17(6)0411(2)C-B
K4F17(6)0411(2)C-F
相關(guān)PDF資料
PDF描述
K4F170411C-F 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F170412C 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F170412C-B 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F170412C-F 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F160411C-B 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4F170411C-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F170411D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F170412C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F170412C-B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
K4F170412C-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode