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參數(shù)資料
| 型號(hào)： | K4E660812B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 8米× 8位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁(yè)數(shù)： | 6/21頁(yè) |
| 文件大?。?/td> | 416K |
| 代理商： | K4E660812B |
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CMOS DRAM
K4E660812B,
K4E640812B
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-45
-50
-60
Units
Note
Min
Max
Min
Max
Min
Max
Data hold time
t
DH
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
CPWD
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
t
RASS
t
RPS
t
CHS
7
7
10
ns
9
Refresh period (Normal)
64
64
64
ms
Refresh period (L-ver)
128
128
128
ms
Write command set-up time
0
0
0
ns
7
CAS to W delay time
24
27
32
ns
7
RAS to W delay time
57
64
77
ns
7
Column address to W delay time
35
39
47
ns
7
CAS set-up time (CAS -before-RAS refresh)
5
5
5
ns
CAS hold time (CAS -before-RAS refresh)
10
10
10
ns
RAS to CAS precharge time
5
5
5
ns
Access time from CAS precharge
24
28
35
ns
3
Hyper Page cycle time
17
20
25
ns
13
Hyper Page read-modify-write cycle time
47
47
56
ns
13
CAS precharge time (Hyper page cycle)
6.5
7
10
ns
RAS pulse width (Hyper page cycle)
45
200K
50
200K
60
200K
ns
RAS hold time from CAS precharge
24
30
35
ns
OE access time
12
13
15
ns
OE to data delay
8
10
13
ns
CAS precharge to W delay time
36
41
52
ns
Output buffer turn off delay time from OE
3
11
3
13
3
13
ns
6
OE command hold time
5
5
5
ns
Write command set-up time (Test mode in)
10
10
10
ns
11
Write command hold time (Test mode in)
10
10
10
ns
11
W to RAS precharge time (C-B-R refresh)
10
10
10
ns
W to RAS hold time (C-B-R refresh)
10
10
10
ns
Output data hold time
4
5
5
ns
Output buffer turn off delay from RAS
3
13
3
13
3
13
ns
6,14
Output buffer turn off delay from W
3
13
3
13
3
13
ns
6
W to data delay
8
15
15
ns
OE to CAS hold time
5
5
5
ns
CAS hold time to OE
5
5
5
ns
OE precharge time
5
5
5
ns
W pulse width (Hyper Page Cycle)
5
5
5
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
15,16,17
RAS precharge time (C-B-R self refresh)
74
90
110
ns
15,16,17
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
15,16,17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E640812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E640812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812E | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E640812E | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E660812C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812E-JC/L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812E-TC/L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E661611D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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