參數(shù)資料
型號: K4E641612D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CMOS DRAM
中文描述: 的CMOS內(nèi)存
文件頁數(shù): 15/36頁
文件大?。?/td> 397K
代理商: K4E641612D
CMOS DRAM
K4E661612D,K4E641612D
Industrial Temperature
R A S
V
IH
-
V
IL
-
U C A S
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
O E
V
IH
-
V
IL
-
C O L U M N
ADDRESS
R O W
A D D R E S S
t
R A S
t
RC
t
C R P
t
R P
t
C S H
t
R S H
t
RCD
t
C A S
t
RAL
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
C R P
D o n
t care
UPPER BYTE WRITE CYCLE ( EARLY WRITE )
N O T E : D
OUT
= O P E N
U n d e f i n e d
L C A S
V
IH
-
V
IL
-
t
W C S
V
IH
-
V
IL
-
D Q 0 ~ D Q 7
V
IH
-
V
IL
-
D Q 8 ~ D Q 1 5
t
W C H
t
W P
t
DS
t
DH
DATA-IN
t
C R P
相關(guān)PDF資料
PDF描述
K4E661612D CMOS DRAM
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