| 型號(hào): | K4E641612C-TL45 |
| 廠商: | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述: | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述: | 4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁(yè)數(shù): | 15/36頁(yè) |
| 文件大小: | 884K |
| 代理商: | K4E641612C-TL45 |

相關(guān)PDF資料 |
PDF描述 |
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| K4E641612C-TL50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-TL60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612D | CMOS DRAM |
| K4E661612D | CMOS DRAM |
| K4E660412D | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E641612C-TL50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-TL60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS DRAM |
| K4E641612D-TC6000 | 制造商:Samsung SDI 功能描述:4M X 16bit CMOS dynamic RAM with extended data out |
| K4E660411D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |