參數(shù)資料
型號(hào): IXGM17N100A
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: Low VCE(sat) IGBT, High speed IGBT
中文描述: 34 A, 1000 V, N-CHANNEL IGBT, TO-204AE
封裝: TO-204AE, 2 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 64K
代理商: IXGM17N100A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 17N100
IXGH 17N100A
IXGM 17N100
IXGM 17N100A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
300
μ
s, duty cycle
2 %
= I
; V
CE
= 10 V,
6
15
S
C
ies
C
oes
C
res
1500
175
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
40
Q
g
Q
ge
Q
gc
100
20
60
120
30
90
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
100
200
500
750
450
ns
ns
ns
ns
ns
mJ
1000
17N100
17N100A
17N100A
750
E
off
3
t
d(on)
t
ri
E
on
t
d(off)
t
fi
100
200
2.5
700
1200
750
ns
ns
mJ
ns
ns
ns
mJ
mJ
1000
2000
1000
17N100
17N100A
17N100
17N100A
E
off
8
6
R
thJC
R
thCK
0.83 K/W
0.25
K/W
IXGH 17N100 and IXGH 17N100 A characteristic curves are located on the
IXGH 17N100U1 and IXGH 17N100AU1 data sheets.
TO-247 AD Outline
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 300
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 82
Remarks: Switching times
may increase
for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
1 = Gate
2 = Emitter
Case = Collector
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 82
Remarks: Switching times
may increase
for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
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