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參數(shù)資料
| 型號(hào)： | IXGH28N120B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage IGBT |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 583K |
| 代理商： | IXGH28N120B |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
IXGH 28N120B
IXGT 28N120B
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
0
10
20
30
40
I
C
- Amperes
50
60
70
80
90
100
g
f
T
J
= -40
o
C
25
o
C
125
o
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0
2
4
6
8
10
12
14
16
18
0
10
20
30
40
R
G
- Ohms
50
60
70
80
90
100
E
o
-
I
C
= 14A
T
J
= 125
o
C
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 56A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0
1
2
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
50
55
60
I
C
- Amperes
E
o
R
G
= 5
V
GE
= 15V
V
CE
= 960V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0
1
2
3
4
5
6
7
8
9
10
11
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
E
o
I
C
= 56A
R
G
= 5
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 14A
Fig. 11. Dependence of Turn-off
Switching Time on R
G
200
400
600
800
1000
1200
1400
0
10
20
30
40
50
60
70
80
90
100
R
G
- Ohms
S
I
C
= 14A
t
d(off)
t
fi
- - - - - -
T
J
= 125oC
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 56A
Fig. 12. Dependence of Turn-off
Switching Time
on I
C
100
150
200
250
300
350
400
450
10
15
20
25
30
35
40
45
50
55
60
I
C
- Amperes
S
t
d(off)
t
fi
- - - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 960V
T
J
= 125
o
C
T
J
= 25
o
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH28N120BD1 | 功能描述:IGBT 晶體管 28 Amps 1200V 3.50 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH28N140B3H1 | 功能描述:IGBT 模塊 Mid-Frequency Range 15khz-40khz w/ Diode RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH28N30 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGH28N30A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGH28N30AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 56A I(C) | TO-247SMD |
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