參數(shù)資料
型號： IXGH24N60AU1S
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： HiPerFAST IGBT with Diode
中文描述： 48 A, 600 V, N-CHANNEL IGBT
封裝： TO-247SMD, COMBIPACK-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 135K
代理商： IXGH24N60AU1S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXGH
24N60BU1
TO-247 AD Outline
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
P
e
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
C90
; V
CE
= 10 V,
9
13
S
C
ies
C
oes
C
res
1500
175
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
40
Q
G
Q
GE
Q
GC
90
11
30
120
15
40
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
25
15
0.6
150
80
0.8
ns
ns
mJ
ns
ns
mJ
200
150
24N60BU1
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
25
15
0.8
250
100
1.4
ns
ns
mJ
ns
ns
mJ
24N60BU1
R
thJC
R
thCK
0.83 K/W
0.25
K/W
Min. Recommended Footprint
(Dimensions in inches and (mm))
I
nductive load, T
J
= 125
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.6
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 240 A/
μ
s
V
= 360 V
I
F
= 1 A; -di/dt = 100 A/
μ
s; V
R
= 30 V T
J
=
10
15
A
T
J
= 125
°
C
150
35
ns
ns
25
°
C
50
R
thJC
1 K/W
相關(guān)PDF資料
PDF描述
IXGH24N60AU1 HiPerFAST IGBT with Diode
IXGH24N60B HiPerFAST IGBT
IXGH24N60CD1 Lightspeed Series HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管(帶二極管）)
IXGT24N60CD1 HiPerFAST IGBT with Diode Lightspeed Series
IXGH24N60C Lightspeed Series HiPerFAST IGBT(VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH24N60B 功能描述:IGBT 晶體管 HIPERFAST IGBT 600V, 48A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH24N60BS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD
IXGH24N60BU1 功能描述:IGBT 晶體管 24 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH24N60BU1S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD
IXGH24N60C 功能描述:IGBT 晶體管 48 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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