參數(shù)資料
型號: IXGH24N60AU1
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: HiPerFAST IGBT with Diode
中文描述: 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁數(shù): 5/6頁
文件大小: 135K
代理商: IXGH24N60AU1
2003 IXYS All rights reserved
di
F
/dt - A/μs
0
200
400
600
t
r
0.0
0.2
0.4
0.6
0.8
di
F
/dt - A/μs
200
400
600
I
R
0
10
20
30
40
di
F
/dt - A/μs
1
10
100
1000
Q
r
0
1
2
3
4
T
J
- Degrees C
0
40
80
120
160
N
R
/
r
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Q
r
I
RM
di
F
/dt - A/μs
0
100
200
300
400
500
600
t
f
0
200
400
600
800
1000
V
F
0
5
10
15
20
25
t
fr
V
FR
Voltage Drop - Volts
0.5
1.0
1.5
2.0
2.5
C
0
20
40
60
80
100
T
J
= 150°C
T
J
= 100°C
T
J
= 25°C
T
J
= 125°C
I
F
= 37A
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
I
F
= 30A
T
J
= 100°C
V
R
= 350V
T
J
= 100°C
V
R
= 350V
T
J
= 100°C
V
R
= 350V
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
max.
I
F
= 30A
max.
I
F
= 30A
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
max.
Fig.16 Peak Reverse Recovery Current
Fig.17 Reverse Recovery Time
Fig.12 Maximum Forward Voltage Drop
Fig.13 Peak Forward Voltage V
FR
and
Forward Recovery Time t
FR
Fig.14Junction Temperature Dependence
off I
RM
and Q
r
Fig.15 Reverse Recovery Chargee
IXGH
24N60BU1
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參數(shù)描述
IXGH24N60AU1S 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode
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IXGH24N60BU1 功能描述:IGBT 晶體管 24 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH24N60BU1S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD