參數(shù)資料
型號(hào)： IXGH20N30
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFAST IGBT
中文描述： 40 A, 300 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 35K
代理商： IXGH20N30
1 - 2
2000 IXYS All rights reserved
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
Features
International standard package
JEDEC TO-247 AD
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Suitable for surface mounting
Switching speed for high frequency
applications
Easy to mount with 1 screw,
(isolated mounting screw hole)
97527A (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
300
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.45
1.6
V
HiPerFAST
TM
IGBT
V
CES
I
C25
V
CE(sat)typ
= 1.45 V
t
fi(typ)
= 180 ns
=
=
300 V
40 A
IXGH20N30
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
300
300
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 100 H
40
20
80
A
A
A
I
= 40
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
200
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
6
g
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXGH20N60 Low VCE(sat) IGBT, High speed IGBT
IXGH20N60A Low VCE(sat) IGBT, High speed IGBT
IXGH20N60B HiPerFAST IGBT
IXGH22N50BU1 HiPerFAST IGBT with Diode
IXGH22N50BU1S HiPerFAST IGBT with Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH20N30S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 40A I(C) | TO-247SMD
IXGH20N50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 40A I(C) | TO-247
IXGH20N50A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 40A I(C) | TO-247
IXGH20N50U1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 40A I(C) | TO-247
IXGH20N60 功能描述:IGBT 晶體管 LOW V IGBT 600V 40A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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