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參數(shù)資料
| 型號： | IXGH17N100AU1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode High speed IGBT with Diode |
| 中文描述： | 34 A, 1000 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 113K |
| 代理商： | IXGH17N100AU1 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 17N100U1
IXGH 17N100AU1
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
6
15
S
C
ies
C
oes
C
res
1500
210
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
40
Q
g
Q
ge
Q
gc
100
20
60
120
30
90
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
100
200
500
750
450
ns
ns
ns
ns
ns
mJ
1000
17N100U1
17N100AU1
17N100AU1
750
E
off
3
t
d(on)
t
ri
E
on
t
d(off)
t
fi
100
200
2.5
700
1200
750
ns
ns
mJ
ns
ns
ns
mJ
mJ
1000
2000
1000
17N100U1
17N100AU1
17N100U1
17N100AU1
E
off
8
6
R
thJC
R
thCK
0.83 K/W
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
2.5
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 240 A/
μ
s
V
= 540 V
I
F
= 1 A; -di/dt = 100 A/
μ
s; V
R
= 30 V T
J
= 25
°
C
16
18
A
ns
ns
T
J
=125
°
C
120
35
50
R
thJC
1 K/W
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 300
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 82
Remarks: Switching times
may increase
for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 82
Remarks: Switching times
may increase
for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH17N100U1 | Low VCE(sat) IGBT with Diode High speed IGBT with Diode |
| IXGH17N100 | Low VCE(sat) IGBT, High speed IGBT |
| IXGH17N100A | Low VCE(sat) IGBT, High speed IGBT |
| IXGM17N100 | Low VCE(sat) IGBT, High speed IGBT |
| IXGM17N100A | Low VCE(sat) IGBT, High speed IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH17N100U1 | 功能描述:IGBT 晶體管 17 Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH20N100 | 功能描述:IGBT 晶體管 40 Amps 1000V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH20N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 40A I(C) | TO-247 |
| IXGH20N100U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 36A I(C) | TO-247 |
| IXGH20N120 | 功能描述:IGBT 晶體管 40 Amps 1200V 3 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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