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參數(shù)資料
| 型號： | IXGH16N170 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage IGBT |
| 中文描述： | 32 A, 1700 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | PLASTIC, TO-268, D3PAK-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 107K |
| 代理商： | IXGH16N170 |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
TO-247 AD Outline
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
10
14
S
I
C(ON)
V
GE
= 10V, V
CE
= 10V
60
A
C
ies
C
oes
C
res
1700
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
83
pF
30
pF
Q
g
Q
ge
Q
gc
69
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13
nC
24
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
45
ns
48
ns
200
400
ns
290
500
ns
6
12
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
48
ns
42
ns
1.5
mJ
200
ns
360
ns
E
off
8
mJ
R
thJC
0.65 K/W
R
thCK
(TO-247)
0.25
K/W
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Min Recommended Footprint
IXGH 16N170
IXGT 16N170
TO-268 Outline
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.752
.106
.055
L2
L3 0.25 BSC .010 BSC
L4
3.80
4.10
1.00
1.15
.039
.045
.150
.161
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| IXGH17N100U1 | Low VCE(sat) IGBT with Diode High speed IGBT with Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH16N170_06 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage IGBT |
| IXGH16N170A | 功能描述:IGBT 晶體管 32 Amps 1700 V 5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH16N170A_05 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage IGBT |
| IXGH16N170AH1 | 功能描述:IGBT 晶體管 11 Amps 1700V 5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH16N60B2 | 制造商:IXYS Corporation 功能描述:IGBT Transistors 600V 16A |
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