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參數(shù)資料
| 型號： | IXGH12N60BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT(VDSS為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | IXGH12N60BD1 |
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t 300 s, duty cycle 2 %
= I
; V
= 10 V,
5
11
S
C
ies
C
oes
C
res
860
100
15
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
32
10
10
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
20
20
ns
ns
ns
ns
mJ
150
120
0.5
250
270
0.8
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
20
20
0.5
200
200
0.8
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
IGBT
1.25
K/W
K/W
0.25
Inductive load, T
J
= 25 C
I
C
= I
, V
= 15 V, L = 300 H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18
Remarks: Switching times may increase
for V
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125 C
I
C
= I
C90
, V
GE
= 15 V, L = 300 H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18
Remarks: Switching times may increase
for V
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
IXGH 12N60BD1
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= 15A; T
VJ
= 150 C
T
VJ
= 25 C
1.3
V
V
2.5
I
RM
V
= 100 V; I
=25A; -di
/dt = 100 A/ s
L < 0.05 H; T
VJ
= 100 C
2
2.5
A
t
rr
I
F
= 1 A; -di/dt = 50 A/ s;
V
R
= 30 V T
J
= 25 C
35
ns
R
thJC
Diode
1.6 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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| IXGH12N60C | Lightspeed Series HiPerFAST IGBT(Lightspeed系列,VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH12N60C | 功能描述:IGBT 晶體管 20 Amps 600V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N60CD1 | 功能描述:IGBT 晶體管 24 Amps 600V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N90C | 功能描述:IGBT 晶體管 24 Amps 900V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N90C_03 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT Lightspeed Series |
| IXGH14N170A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage IGBT |
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