- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄383196 > IXGE200N60B (IXYS CORP) HiPerFAST IGBT PDF資料下載
參數(shù)資料
| 型號(hào)： | IXGE200N60B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 160 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS227, 4 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 75K |
| 代理商： | IXGE200N60B |
2002 IXYS All rights reserved
Features
Conforms to SOT-227B outline
Isolation voltage 3000 V~
Very high current, fast switching IGBT
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 2 screws
Space savings
High power density
E
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
T
J
= 25
°
C to 150
°
C
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 2.4
Clamped inductive load, L = 30
μ
H
175
112
400
A
A
A
I
= 200
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
V
ISOL
T
C
= 25
°
C
500
W
-40 ... +150
°
C
°
C
°
C
150
-40 ... +150
50/60 Hz
I
ISOL
≤
1 mA
Mounting torque
Terminal connection torque (M4)
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
19
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA , V
GE
= 0 V
= 1 mA, V
CE
= V
GE
600
2.5 5.5
V
V
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
2
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
400
nA
V
CE(sat)
I
C
= 120A, V
GE
= 15 V
2.1
V
98911 (2/02)
HiPerFAST
TM
IGBT
IXGE 200N60B
V
CES
I
C25
V
CE(sat)
= 600 V
= 175 A
= 2.1 V
Advance Technical Information
G
E
C
G = Gate,
E = Emitter, C = Collector
either emitter terminal can be
used as Main or Kelvin Emitter
E
ISOPLUS 227
TM
(IXGE)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH10N100U1 | Low VCE(sat) IGBT with Diode, High speed IGBT with Diode |
| IXGH10N100AU1 | Low VCE(sat) IGBT with Diode, High speed IGBT with Diode |
| IXGH10N100 | Low VCE(sat) IGBT, High speed IGBT |
| IXGH10N100A | Low VCE(sat) IGBT, High speed IGBT |
| IXGH10N60 | Low VCE(sat) IGBT, High speed IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGE200N60B_04 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGE50N100Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 50A I(C) |
| IXGE50N50Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) |
| IXGE50N60Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 50A I(C) |
| IXGE50N80Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 800V V(BR)CES | 50A I(C) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。