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參數(shù)資料
| 型號(hào)： | IXGA10N60 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) IGBT, High speed IGBT |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT, TO-263AA |
| 封裝： | TO-263AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 56K |
| 代理商： | IXGA10N60 |
1996 IXYS All rights reserved
91510G (9/96 )
Preliminary data
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
600
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
10N60
10N60A
2.5
3.0
V
V
Features
l
International standard packages
JEDEC TO-263 AA surface
mountable and JEDEC TO-247 AD
l
2nd generation HDMOS
TM
process
Low V
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings, TO-263 AA
l
Facilitates automated assembly
l
Reduces assembly time and cost
l
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
l
High power density
G
E
C (TAB)
TO-263 AA (IXGA)
E
C
G
GCE
TO-247 AD (IXGH)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
Low V
CE(sat)
IGBT
High speed IGBT
TO-220AB(IXGP)
IXGA/IXGP/IXGH10N60
IXGA/IXGP/IXGH10N60A
V
CES
600 V
600 V
I
C25
20 A
20 A
V
CE(sat)
2.5 V
3.0 V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 150
Clamped inductive load, L = 300
μ
H
20
10
40
A
A
A
I
= 20
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25
°
C
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
300
°
C
M
d
Weight
Mounting torque, TO-247 AD
1.13/10 Nm/lb.in.
TO-263 AA
TO-247 AD
2
6
g
g
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PDF描述 |
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| IXGA10N60A | Low VCE(sat) IGBT, High speed IGBT |
| IXGA12N100AU1 | IGBT - Combi Pack |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGA10N60A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High speed IGBT |
| IXGA10N60AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA |
| IXGA10N60U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA |
| IXGA120N30TC | 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA12N100 | 功能描述:IGBT 晶體管 24Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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