參數(shù)資料
型號： IXFX52N60Q2
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： Advanced Technical Information
中文描述： 52 A, 600 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, PLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 548K
代理商： IXFX52N60Q2
2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
600
600
V
V
±
30
±
40
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
52
A
A
A
208
52
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
75
4.0
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
20
V/ns
P
D
T
J
T
JM
T
stg
735
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
M
d
Mounting torque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
TO-264
6
g
g
10
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
, low t
rr
Features
z
Double metal process for low gate
resistance
z
International standard packages
z
Epoxy
meet
UL
94
V-0, flammability
classification
z
Avalanche energy and current rated
z
Fast intrinsic Rectifier
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
600
2.0
V
V
4.5
±
200
nA
T
J
= 25
°
C
T
J
= 125
°
C
50
2
μ
A
mA
R
DS(on)
115 m
G = Gate
S = Source
D = Drain
TAB = Drain
DS98982A(12/03)
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
I
D25
R
DS(on)
t
rr
≤
250 ns
= 600 V
= 52 A
= 115 m
IXFK 52N60Q2
IXFX 52N60Q2
PLUS 247
TM
(IXFX)
GD
D (TAB)
Advanced Technical Information
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