參數(shù)資料
型號(hào)： IXFX48N60P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
中文描述： 48 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLUS247, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 227K
代理商： IXFX48N60P
2006 IXYS All rights reserved
DS99375E(02/06)
PolarHV
TM
HiPerFET
Power MOSFET
V
DSS
I
D2
R
DS(on)
t
rr
=
=
≤
≤
600 V
48
135m
200 ns
A
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
l
International standard packages
l
Fast recovery diode
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA
3.0
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
1000
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
135
m
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
600
V
V
DGR
600
V
V
GSS
Continuous
±
30
V
V
GSM
Transient
±
40
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
48
A
110
A
I
AR
48
A
E
AR
E
AS
70
mJ
2.0
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
20
V/ns
P
D
830
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
M
d
Mounting torque (TO-264)
1.13/10 Nm/lb.in.
Weight
PLUS247
TO-264
10
6
g
g
T
L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°
C
°
C
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
S
G
D
(TAB)
TO-264 (IXFK)
IXFK 48N60P
IXFX 48N60P
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