參數(shù)資料
型號(hào)： IXFT21N50Q
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs MOSFETs
中文描述： 21 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
封裝： TO-268, 3 PIN
文件頁數(shù)： 1/4頁
文件大小： 562K
代理商： IXFT21N50Q
2004 IXYS All rights reserved
98718B(02/04)
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
±
30
±
40
V
Transient
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
21
84
21
A
A
A
E
AR
T
C
= 25
°
C
30
mJ
E
AS
1.5
mJ
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
15
V/ns
P
D
T
C
= 25
°
C
280
W
T
J
T
JM
T
stg
-55 to +150
150
-55 to +150
°
C
°
C
°
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247 6
TO-268 4
g
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
l
IXYS advanced low Q
g
process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low R
DS (on)
l
Rated for unclamped Inductive load
switching (UIS) rated
l
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 4 mA
500
2.5
V
V
4.5
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
1
μ
A
mA
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.25
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFET
TM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
V
DSS
I
D25
R
DS(on)
250 ns
= 500 V
= 21 A
= 0.25
t
rr
≤
IXFH 21N50Q
IXFT 21N50Q
(TAB)
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