參數(shù)資料
型號(hào)： IXFT10N100
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
中文描述： 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 556K
代理商： IXFT10N100
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
10N100
12N100
10N100
12N100
10N100
12N100
10
12
40
48
10
12
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
I
AR
T
C
= 25
°
C
E
AR
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
30
mJ
dv/dt
I
S
5
V/ns
P
D
300
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-268 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
1000
V
2.0
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125
°
C
25
°
C
250
μ
A
mA
1
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
10N100
12N100
1.20
1.05
Pulse test, t
≤
300
μ
s, duty cycle
d
≤
2 %
G = Gate,
S = Source,
TAB = Drain
Features
z
International standard package
z
Low R
DS (on)
HDMOS
TM
process
z
Rugged polysilicon gate cell
structure
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Synchronous rectification
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
z
Temperature and lighting controls
z
Low voltage relays
Advantages
z
Surface mountable, high power
package
z
Space savings
z
High power density
V
DSS
1000 V 10 A
1000 V 12 A
I
D25
R
DS(on)
1.20
1.05
IXFT
10
N100
IXFT12
N100
t
rr
≤
250 ns
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
DS98509A(01/04)
Preliminary data sheet
TO-268 Case Style
(TAB)
G
S
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參數(shù)描述
IXFT10N100Q 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFETTM Power MOSFETs Q Class
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IXFT12N100 功能描述:MOSFET 12 Amps 1000V 1.05 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT12N100F 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT12N100Q 功能描述:MOSFET 12 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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