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參數(shù)資料
| 型號： | IRLRU130A |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進的功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 267K |
| 代理商： | IRLRU130A |
IRLR/U130A
BV
DSS
= 100 V
R
DS(on)
= 0.12
I
D
= 13 A
100
13
8
45
±
20
225
13
4.6
6.5
2.5
46
0.37
- 55 to +150
300
2.7
50
110
--
--
--
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.101
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
A
=25
°
C)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
°
C
A
°
C
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
1999 Fairchild Semiconductor Corporation
Rev. B
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|---|---|
| IRLRU210A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLRU220A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLRU230A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLRU2905 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLR-U2905PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Process Technology |
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