參數(shù)資料
型號(hào)： IRGP30B60KD-E
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁(yè)數(shù)： 2/12頁(yè)
文件大小： 603K
代理商： IRGP30B60KD-E
IRGP30B60KD-E
2
www.irf.com
Notes:
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28μH, R
G
= 22
.
Energy losses include "tail" and diode reverse recovery.
22
Parameter
Qg
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Qgc
Gate - Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
102
–––
14
–––
44
–––
350
–––
825
––– 1175 1575
–––
46
–––
28
–––
185
–––
31
–––
635 1085
––– 1150 1350
––– 1785 2435
–––
46
–––
28
–––
205
–––
32
––– 1750 –––
–––
160
–––
60
Conditions
I
C
= 30A
V
CC
= 400V
V
GE
= 15V
I
C
= 30A, V
CC
= 400V
V
GE
=15V, R
G
= 10
,
L=200μH,
L
S
= 150nH
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10
L =200μH
L
S
= 150nH, T
J
= 25°C
153
21
66
620
955
nC
μJ
T
J
= 25°C
60
39
200
40
ns
I
C
= 30A, V
CC
= 400V
V
GE
= 15V,R
G
= 10
,
L =200μH
L
S
= 150nH
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10
L =200μH
L
S
= 150nH, T
J
= 150°C
μJ
T
J
= 150°C
60
39
235
42
ns
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 120A, Vp =600V
V
CC
= 500V, V
GE
= +15V to 0V,
T
J
= 150°C, Vp =600V, R
G
= 10
V
CC
= 360V, V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 400V, I
F
= 30A, L = 200μH
V
GE
= 15V,R
G
= 10
,
L
S
= 150nH
–––
–––
pF
Erec
t
rr
I
rr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current –––
–––
–––
925 1165
125
43
μJ
ns
A
–––
48
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
–––
Ref.Fig.
23
CT.1
CT.4
CT.4
13,15
WF1,WF2
4
CT.2
CT.3
WF.4
17,18,19
20,21
CT.4,WF.3
CT.4
R
G
=10
CT.4
14, 16
WF1,WF2
μs
Ref.Fig.
5, 6,7
9, 10,11
9,10,11
12
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
–––
–––
0.4
–––
1.95 2.35
–––
2.40 2.75
3.5
4.5
-10
–––
18
–––
5.0
––– 1000 2000
–––
1.30 1.55
–––
1.25 1.50
–––
––– ±100
Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V, I
C
= 1.0mA, (25°C-150°C)
I
C
= 30A, V
GE
= 15V
I
C
= 30A,V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 1.0mA, (25°C-150°C)
V
CE
= 50V, I
C
= 50A, PW=80μs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
F
= 30A
I
F
= 30A T
J
= 150°C
V
GE
= ±20V
–––
–––
V
V/°C
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
5.5
––– mV/°C
–––
250
V
S
μA
V
FM
Diode Forward Voltage Drop
V
I
GES
Gate-to-Emitter Leakage Current
nA
8
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