參數(shù)資料
型號： IRG4MC50U
英文描述： TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-254AA
中文描述： 晶體管| IGBT的|正陳| 600V的五（巴西）國際消費電子展| 35A條一（c）|至254AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 141K
代理商： IRG4MC50U
2
www.irf.com
IRG4MC30F
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Rise Time
Total Switching Loss
Total Inductance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
ts
t
d(on)
t
r
t
d(off)
t
r
E
ts
L
C
+L
E
77
12
24
42
30
300
300
2.0
25
20
450
550
3.0
–––
I
C
= 15A
V
CC
= 300V
V
GE
= 15V
T
J
= 25°C
I
C
= 15A, V
CC
= 480V
V
GE
= 15V, R
G
= 7.5
Energy losses include "tail"
See Fig. 10, 11, 13, 14
T
J
= 125°C,
I
C
= 15A, V
CC
= 480V
V
GE
= 15V, R
G
= 7.5
Energy losses include "tail"
See Fig. 13, 14
Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
nC
See Fig. 8
mJ
ns
mJ
nH
C
ies
C
oes
C
res
Notes:
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1100 –––
–––
74
–––
14
–––
–––
pF
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
–––
18
–––
–––
0.63
–––
–––
–––
–––
–––
–––
3.0
–––
–––
-11
14
–––
–––
–––
–––
–––
–––
–––
Conditions
V
(BR)CES
V
(BR)ECS
–––
–––
–––
1.7
2.2
2.7
6.0
–––
–––
50
1000
±100
V
V
V
GE
= 0V, I
C
= 1.0 mA
V
GE
= 0V, I
C
= 1.0 A
V
GE
= 0V, I
C
= 1.0 mA
I
C
= 15A V
GE
= 15V
I
C
= 28A
I
C
= 15A , T
J
= 125
°
C
V
CE
= V
GE
, I
C
= 1.0 mA
mV/
°
C V
CE
= V
GE
, I
C
= 250 μA
S
V
CE
≥
15V, I
C
= 15A
V
GE
= 0V, V
CE
= 480V
V
GE
= 0V, V
CE
= 480V, T
J
= 125
°
C
nA
V
GE
= ±20V
V/
°
C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
V
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L =
100μH, R
G
= 7.5
,
(See fig. 13a)
相關PDF資料
PDF描述
IRG4PC50S-P 600V DC-1 kHz (Standard) Discrete IGBT in a SM TO-247 package
IRG4PC60F-P 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
IRG4PC60U-P 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
IRG4PH40S TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 20A I(C) | TO-247AC
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相關代理商/技術參數(shù)
參數(shù)描述
IRG4MC50USCV 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 35A 3PIN TO-254AA - Bulk
IRG4MC50USCX 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 35A 3PIN TO-254AA - Bulk
IRG4MVC50U 制造商:International Rectifier 功能描述:
IRG4P254S 功能描述:IGBT STD 250V 98A TO-247AC RoHS:否 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
IRG4P254SD 制造商:International Rectifier 功能描述:250V 70.000A COPAK 247 / IGBT : JA / DIS
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