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參數(shù)資料
| 型號： | IRFN9240SMD |
| 英文描述： | P-Channel Power MOSFET(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω)(P溝道功率MOS場效應(yīng)管(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω)) |
| 中文描述： | P溝道功率MOSFET（減振鋼板基本：- 200伏，身份證（續(xù)）：- 8A型，的Rds（on）：0.051Ω）性（P溝道功率馬鞍山場效應(yīng)管（減振鋼板基本：- 200伏，身份證（續(xù)）：- 8A型，的RDS（on）：0.051Ω）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | IRFN9240SMD |
IRFN9240SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= –1mA
V
GS
= –10V
V
GS
= –10V
V
DS
= V
GS
V
DS
3
–15V
V
GS
= 0
I
D
= –1mA
I
D
= –5A
I
D
= –8A
I
D
= –250
m
A
I
DS
= –5A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= –20V
V
GS
= 20V
V
GS
= 0
V
DS
= –25V
f = 1MHz
V
GS
= –10V
V
DS
= 0.5BV
DSS
I
D
= –8A
V
DS
= 0.5BV
DSS
I
D
= –8A
V
DD
= –100V
I
D
= –8A
R
G
= 9.1
W
I
S
= –8A
V
GS
= 0
I
F
= –8A
d
i
/ d
t
￡
–100A/
m
s V
DD
￡
–50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
–200
–0.020
0.51
0.52
–4
–2
4.0
–25
–250
–100
100
1200
570
81
28
60
3.0
4.5
15
38
35
85
85
65
–8
–32
–4.6
440
7.2
negligible
0.8
2.8
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
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