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參數(shù)資料
| 型號(hào)： | IRFG9110 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET THRU-HOLE (MO-036AB) |
| 中文描述： | 功率MOSFET的通孔（莫- 036AB） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 218K |
| 代理商： | IRFG9110 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
-0.75
-0.5
-3.0
1.4
0.011
±20
75
—
—
-5.5
-55 to 150
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 ( 0.063 in.(1.6mm) from case for 10s)
1.3 (typical)
g
PD - 90397G
o
C
A
04/16/02
www.irf.com
1
MO-036AB
Product Summary
Part Number R
DS(on)
I
D
IRFG9110 1.4
-0.75A
For footnotes refer to the last page
HEXFET
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET
tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
POWER MOSFET
THRU-HOLE (MO-036AB)
IRFG9110
JANTX2N7335
JANTXV2N7335
REF:MIL-PRF-19500/599
100V, QUAD P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
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