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參數(shù)資料
| 型號： | IRF7809A |
| 廠商： | International Rectifier |
| 元件分類： | DC/DC變換器 |
| 英文描述： | Chipset for DC-DC Converters |
| 中文描述： | 芯片組的DC - DC轉(zhuǎn)換器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 128K |
| 代理商： | IRF7809A |
www.irf.com
2
IRF7809A/IRF7811A
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Diode Forward
Voltage*
V
SD
1.0
1.0
V
I
S
= 15A
, V
GS
= 0V
Reverse Recovery
Charge
Q
rr
94
82
nC
di/dt
~
700A/μs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
di/dt = 700A/μs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Q
rr(s)
87
74
Parameter
Drain-to-Source
Breakdown Voltage*
Min
30
Typ
–
Max
–
Min
28
Typ
–
Max Units
–
Conditions
BV
DSS
V
V
GS
= 0V, I
D
= 250μA
Static Drain-Source
on Resistance*
R
DS
(on)
7
8.5
10
12
m
V
GS
= 4.5V, I
D
= 15A
Gate Threshold Voltage*
Drain-Source Leakage
Current*
V
GS(th)
I
DSS
1.0
1.0
V
μA
V
DS
= V
GS
,I
D
= 250μA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100°C
30
30
150
150
Gate-Source Leakage
Current*
I
GSS
±100
±100
nA
V
GS
= ±12V
Total Gate Chg Cont FET*
Total Gate Chg Sync FET*
Q
G
Q
G
Q
GS1
61
55
75
73
19
17
23
20.5
V
GS
=5V, I
D
=15A, V
DS
=16V
V
GS
= 5V, V
DS
< 100mV
V
DS
= 16V, I
D
= 15A
Pre-Vth
Gate-Source Charge
14
2.7
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Q
GS2
3.5
1.3
nC
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d
(off)
t
f
C
iss
C
oss
13.5
4.5
Switch Chg(Q
gs2
+ Q
gd
)*
Output Charge*
17
25
22.5
30
5.8
26
7.0
31
V
DS
= 16V, V
GS
= 0
Gate Resistance
Turn-on Delay Time
Rise Time
1.1
19
9
1.8
8
4
V
DD
= 16V, I
D
= 15A
V
GS
= 5V
Clamped Inductive Load
ns
Turn-off Delay Time
Fall Time
32
12
16
8
Input Capacitance
Output Capacitance
–
–
7300
900
–
–
–
–
1800
900
–
–
pF
V
DS
= 16V, V
GS
= 0
Reverse Transfer Capacitance C
rss
–
350
–
–
60
–
Electrical Characteristics
Source-Drain Rating & Characteristics
IRF7809A
IRF7811A
Current*
Notes:
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
300 μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
Devices are 100% tested to these parameters.
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| IRF7809ATR | 功能描述:MOSFET N-CH 30V 14.5A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7809AV | 功能描述:MOSFET N-CH 30V 13.3A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7809AVHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC |
| IRF7809AVPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7809AVTRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 13.3A 8SOIC - Tape and Reel |
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