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參數(shù)資料
| 型號： | IL352 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | ROHS COMPLIANT, SMD, 8 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 119K |
| 代理商： | IL352 |
Optocoupler, Phototransistor Output, with Base Connection
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83624
370
Rev. 1.6, 10-Dec-08
IL352
Vishay Semiconductors
DESCRIPTION
The IL352 optically coupled isolator that features a high
current transfer ratio, low coupling capacitance and high
isolation voltage. It has a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector. The component is housed in a thin
line package.
The coupling device is designed for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled must not
exceed the maximum permissible reference voltages.
FEATURES
Good CTR linearly depending on forward
current
Isolation test voltage: 3000 VRMS
High collector emitter voltage, VCEO = 30 V
Low saturation voltage
Fast switching times
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
UL1577, file no. E52744 system code S
DIN EN 60747-5-5 (VDE 0884) available with option 1
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices.
i179027
C
A
1
2
3
4
5
6
7
8
N.C
C
B
E
ORDER INFORMATION
PART
REMARKS
IL352
CTR > 100 %, SMD-8
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
DC forward current
IF
60
mA
Total power dissipation
Pdiss
50
mW
Derate linearly from 25 °C
0.66
mW/°C
OUTPUT
Collector emitter voltage
VCE
70
V
Emitter base voltage
VEBO
7V
Collector current
IC
50
mA
t
≤ 1 ms
IC
100
mA
Total power dissipation
Pdiss
150
mW
Derate linearly from 25 °C
2.5
mW/°C
COUPLER
Isolation test voltage
between emitter and detector
t = 1.0 s
VISO
3000
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 40 to + 150
°C
Ambient temperature range
Tamb
- 40 to + 85
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
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