參數(shù)資料
型號： IGB50N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
中文描述： 低損耗IGBT的在戰(zhàn)壕和場終止技術(shù)
文件頁數(shù)： 8/13頁
文件大?。?/td> 402K
代理商： IGB50N60T
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
8
Rev. 2.2 Dec-04
V
G
,
G
-
E
0nC
100nC
200nC
300nC
0V
5V
10V
15V
480V
120V
c
C
0V
10V
20V
30V
40V
100pF
1nF
C
rss
C
oss
C
iss
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(
V
GE
=0V,
f
= 1 MHz)
Figure 17. Typical gate charge
(
I
C
=50 A)
I
C
,
C
12V
14V
16V
18V
0A
100A
200A
300A
400A
500A
600A
700A
800A
t
S
,
S
10V
11V
12V
13V
14V
0μs
2μs
4μs
6μs
8μs
10μs
12μs
V
GE
,
GATE
-
EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(
V
CE
≤
400V,
T
j
≤
150
°
C)
V
GE
,
GATE
-
EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=600V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
相關(guān)PDF資料
PDF描述
IGP50N60T LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
IGW50N60T LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
IGW15T120 Low Loss IGBT in Trench and Fieldstop Technology
IGW25T120 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 100V; Case Size: 10x12.5 mm; Packaging: Bulk
IH401A QUAD Varafet Analog Switch
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IGB50N60T_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in TrenchStop technology
IGB50N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 100A 333W TO263-3
IGB639382 制造商:Amphenol PCD 功能描述:IGB 6 - Bulk
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IGBT-4 制造商:International Rectifier 功能描述:BOOK IGBT DESIGN GUIDE
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