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參數(shù)資料
| 型號： | IGB15N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss IGBT in Trench and Fieldstop technology |
| 中文描述： | 在戴低損失和場終止IGBT技術(shù) |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 364K |
| 代理商： | IGB15N60T |
TrenchStop Series
IGB15N60T
q
Power Semiconductors
7
Rev. 2.1 Dec-04
E
,
S
0A
5A
10A
15A
20A
25A
0.0mJ
0.4mJ
0.8mJ
1.2mJ
1.6mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
E
,
S
0
10 20 30 40 50 60 70 80
0.2 mJ
0.4 mJ
0.6 mJ
0.8 mJ
1.0 mJ
1.2 mJ
1.4 mJ
1.6 mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 15
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 15A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C 100°C 125°C 150°C
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
0.7mJ
0.8mJ
0.9mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
300V
350V
400V
450V
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 15A,
R
G
= 15
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 15A,
R
G
= 15
,
Dynamic test circuit in Figure E)
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