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參數(shù)資料
| 型號： | IDT71V256SB12Y |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) |
| 中文描述： | 32K X 8 CACHE TAG SRAM, 12 ns, PDSO28 |
| 封裝： | 0.300 INCH, SOJ-28 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 67K |
| 代理商： | IDT71V256SB12Y |
Integrated Device Technology, Inc.
INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
MAY 1997
1997 Integrated Device Technology, Inc.
DSC-3101/04
1
LOW POWER
3.3V CMOS FAST SRAM
256K (32K x 8-BIT)
IDT71V256SA
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FEATURES
Ideal for high-performance processor secondary cache
Commercial (0
°
to 70
°
C) and Industrial (-40
°
to 85
°
C)
temperature options
Fast access times:
— Commercial: 10/12/15/20ns
— Industrial: 15ns
Low standby current (maximum):
— 2mA full standby
Small packages for space-efficient layouts:
— 28-pin 300 mil SOJ
— 28-pin 300 mil plastic DIP (Commercial only)
— 28-pin TSOP Type I
Produced with advanced high-performance CMOS
technology
Inputs and outputs are LVTTL-compatible
Single 3.3V(
±
0.3V) power supply
DESCRIPTION
The IDT71V256SA is a 262,144-bit high-speed static RAM
organized as 32K x 8. It is fabricated using IDT’s high-
performance, high-reliability CMOS technology.
The IDT71V256SA has outstanding low power character-
istics while at the same time maintaining very high perfor-
mance. Address access times of as fast as10 ns are ideal for
3.3V secondary cache in 3.3V desktop designs.
When power management logic puts the IDT71V256SA in
standby mode, its very low power characteristics contribute to
extended battery life. By taking
CS
HIGH, the SRAM will
automatically go to a low power standby mode and will remain
in standby as long as
CS
remains HIGH. Furthermore, under
full standby mode (
CS
at CMOS level, f=0), power consump-
tion is guaranteed to always be less than 6.6mW and typically
will be much smaller.
The IDT71V256SA is packaged in 28-pin 300 mil SOJ, 28-
pin 300 mil plastic DIP, and 28-pin 300 mil TSOP Type I
packaging.
A
0
ADDRESS
DECODER
262,144 BIT
MEMORY ARRAY
I/O CONTROL
3101 drw 01
INPUT
DATA
CIRCUIT
WE
CS
OE
V
CC
GND
A
14
I/O
0
I/O
7
CONTROL
CIRCUIT
FUNCTIONAL BLOCK DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT71V256SA20PZ | LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) |
| IDT71V256SA20TP | LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) |
| IDT71V256SA20Y | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: X7R; Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.300" x 0.390" x 0.200"; Container: Bag; Qty per Container: 250 |
| IDT71V256SB | 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) |
| IDT71V256SB15PZ | 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71V256SL15Y | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT71V25761S166BG | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V25761S166BG8 | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V25761S166BGI | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V25761S166BGI8 | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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