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參數(shù)資料
| 型號： | IDT08S60C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 2nd Generation thinQ! SiC Schottky Diode |
| 中文描述： | 第二代thinQ！碳化硅肖特基二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 240K |
| 代理商： | IDT08S60C |
IDT08S60C
2
nd
Generation thinQ!
TM
SiC Schottky Diode
Features
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark
No reverse recovery/ No forward recovery
No temperature influence on the switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Breakdown voltage tested at 5mA
2)
thinQ! 2G Diode specially designed for fast switching applications like:
CCM PFC
Motor Drives
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous forward current
I
F
T
C
<140 °C
8
A
RMS forward current
I
F,RMS
f
=50 Hz
12
Surge non-repetitive forward current,
sine halfwave
I
F,SM
T
C
=25 °C,
t
p
=10 ms
59
Repetitive peak forward current
I
F,RM
T
j
=150 °C,
T
C
=100 °C,
D
=0.1
32
Non-repetitive peak forward current
I
F,max
T
C
=25 °C,
t
p
=10 μs
264
i
2
t
value
∫
i
2
d
t
T
C
=25 °C,
t
p
=10 ms
17
A
2
s
Repetitive peak reverse voltage
V
RRM
600
V
Diode dv/dt ruggedness
d
v/
d
t
V
R
=0…480V
50
V/ns
Power dissipation
P
tot
T
C
=25 °C
75
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
Mounting torque
M3 and M3.5 screws
60
Ncm
Value
V
DC
600
V
Q
c
19
nC
I
F
8
A
Product Summary
PG-TO220-2-2
Type
Package
Marking
Pin 1
Pin 2
IDT08S60C
PG-TO220-2-2
D08S60C
C
A
Rev. 2.0
page 1
2006-03-14
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