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參數(shù)資料
| 型號(hào)： | HSS83 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Diode for High Voltage Switching |
| 中文描述： | 硅二極管外延平面高壓開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 26K |
| 代理商： | HSS83 |
HSS83
2
Absolute Maximum Ratings
*
2
(Ta = 25°C)
Item
Symbol
Value
Unit
V
RM
*
1
V
R
I
FM
I
FSM
*
2
I
O
Pd
300
V
Reverse voltage
250
V
Peak forward current
625
mA
Non-Repetitive peak forward surge current
1
A
Average forward current
150
mA
Power dissipation
400
mW
Junction temperature
Tj
200
°
C
°
C
Storage temperature
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.
2. Within 1s forward surge current.
Tstg
–65 to +175
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R1
I
R2
C
—
—
1.0
V
I
F
= 100mA
V
R
= 250V
V
R
= 300V
V
R
= 0V, f = 1MHz
I
F
= I
R
= 30mA, Irr = 3mA, R
L
= 100
Reverse current
—
—
0.2
μ
A
—
—
100
Capacitance
—
1.5
—
pF
Reverse recovery time
t
rr
—
—
100
ns
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