參數(shù)資料
型號(hào): 28LV011RT4FS-20
廠商: MAXWELL TECHNOLOGIES
元件分類: PROM
英文描述: 3.3V 1 Megabit (128K x 8-Bit) EEPROM
中文描述: 128K X 8 EEPROM 3V, 200 ns, DFP32
封裝: LDFP-32
文件頁數(shù): 14/19頁
文件大?。?/td> 305K
代理商: 28LV011RT4FS-20
M
14
All data sheets are subject to change without notice
2002 Maxwell Technologies
All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV011
05.28.02 Rev 2
F
IGURE
11. SEU S
ATURATED
C
ROSS
S
ECTION
V
ALUES
IN
W
RITE
M
ODE
EEPROMA
PPLICATION
N
OTES
This application note describes the programmng procedures for the EEPROMmodules and with details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 μs for the second byte. In the same manner each additional byte
of data can be loaded within 30 μs. In case CE and WE are kept high for 100s after data input, EEPROMenters erase
and write mode automatically and only the input data are written into the EEPROM
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROMto be determned. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs fromI/O 7 to indicate that the EEPROMis per-
formng a write operation.
28LV010 WRITE MODE AVERAGE CROSS-SECTION
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
0
10
20
30
40
50
60
70
80
90
LET [MeV-cm^2/mg]
C
SL1
SL2
SL3
N4
N5
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