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參數(shù)資料
| 型號(hào)： | HZS12NB2 |
| 廠商： | Renesas Technology Corp. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 74K |
| 代理商： | HZS12NB2 |
Rev.2.00, Jan.06.2003, page 1 of 6
HZS-L Series
Silicon Epitaxial Planar Zener Diode for
Low Noise Application
REJ03G0166-0200Z
(Previous: ADE-208-121A)
Rev.2.00
Jan.06.2004
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
Mark
Package Code
HZS-L Series
Type No.
MHD
Pin Arrangement
1. Cathode
2. Anode
Cathode band
Type No.
1
2
B
2
7
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PDF描述 |
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| HZS12NB3 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZS12NB4 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZS12A1 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZS12A2 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZS12A3 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZS12N-B2(TD-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| HZS12NB3 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS12NB4 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS13NB1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS13NB2 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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