參數(shù)資料
型號(hào): HY62WT08081E-DGI
廠商: Hynix Semiconductor Inc.
英文描述: HY62WT08081E Series 32Kx8bit CMOS SRAM
中文描述: HY62WT08081E系列32Kx8bit CMOS SRAM的
文件頁(yè)數(shù): 5/13頁(yè)
文件大?。?/td> 205K
代理商: HY62WT08081E-DGI
HY62WT08081E Series
DC CHARACTERISTICS
Vcc = 4.5 ~ 5.5V, T
A
= 0
°
C to 70
°
C (Normal) / -25
°
C to 85
°
C (Extended) / -40
°
C to 85
°
C (Industrial),
unless otherwise specified.
Symbol
Parameter
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating Current
/CS = V
IL,
V
IN
= V
IH
or V
IL,
Min. Duty Cycle = 100%, I
I/O =
0mA
I
SB
TTL Standby Current
(TTL Inputs)
V
IN
= V
IH
or V
IL
I
SB1
CMOS Standby Current
/CS > Vcc - 0.2V,
(CMOS Inputs)
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
V
OL
Output Low Voltage
I
OL
= 2.1mA
V
OH
Output High Voltage
I
OH =
-1.0mA
Note : Typical values are at Vcc =5.0V, T
A
= 25
°
C
Vcc = 2.7~3.6V, T
A
= 0
°
C to 70
°
C (Normal) / -25
°
C to 85
°
C (Extended) / -40
°
C to 85
°
C (Industrial),
unless otherwise specified.
Symbol
Parameter
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating Current
/CS = V
IL,
V
IN
= V
IH
or V
IL,
Min. Duty Cycle = 100%, I
I/O =
0mA
I
SB
TTL Standby Current
(TTL Inputs)
V
IN
= V
IH
or V
IL
I
SB1
CMOS Standby Current
/CS > Vcc - 0.2V,
(CMOS Inputs)
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
V
OL
Output Low Voltage
I
OL
= 2.1mA
V
OH
Output High Voltage
I
OH =
-1.0mA
Note : Typical values are at Vcc =3.0/3.3V, T
A
= 25
°
C
Rev 04 / May. 2001
4
Test Condition
Min.
-1
-1
Typ.
-
-
Max.
1
1
Unit
uA
uA
/CS = V
IL
,
-
-
10
mA
-
-
50
mA
/CS= V
IH,
-
-
1
mA
0~ 70
°
C
-
-
10
uA
-25~ 85
°
C or
-40~ 85
°
C
-
-
20
uA
-
-
-
0.4
-
V
V
2.4
Test Condition
Min.
-1
-1
Typ.
-
-
Max.
1
1
Unit
uA
uA
/CS = V
IL
,
-
-
2
mA
-
-
30
mA
/CS= V
IH,
-
-
0.3
mA
0~ 70
°
C
-
-
5
uA
-25~ 85
°
C or
-40~ 85
°
C
-
-
8
uA
-
-
-
0.4
-
V
V
2.2
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