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參數(shù)資料
| 型號(hào)： | HS-2600RH |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Wideband, High Impedance Operational Amplifier(抗輻射寬帶、高阻抗運(yùn)算放大器) |
| 中文描述： | 輻射加固寬帶，高阻運(yùn)算放大器（抗輻射寬帶，高阻抗運(yùn)算放大器） |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | HS-2600RH |
5
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
69 mils x 56 mils x 19 mils
±
1 mils
1750
μ
m x 1420
μ
m x 483
μ
m
±
25.4
μ
m
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
±
2k
Nitride Thickness: 3.5k
±
1.5k
Top Metallization:
Type: Al, 1% Cu
Thickness: 16k
±
2k
Substrate:
Linear Bipolar DI
Backside Finish:
Silicon
Metallization Mask Layout
ASSEMBLY RELATED INFORMATION:
Substrate Potential
(Powered Up)
:
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 10
5
A/cm
2
Transistor Count:
140
HS-2600RH
+IN
-IN
BAL
COMP
V+
OUT
BAL
V-
HS-2600RH
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