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參數資料
| 型號： | HN7G01FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Power Management Switch Applications |
| 中文描述： | 電源管理開關應用 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 729K |
| 代理商： | HN7G01FE |
HN7G01FE
2007-11-01
1
TOSHIBA Multichip Discrete Device
HN7G01FE
Power Management Switch Applications
Driver Circuit Applications
Interface Circuit Applications
Q1 (transistor): 2SA1955 equivalent
Q2 (MOSFET): SSM3K03FE equivalent
Q1
(Transistor)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
15
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
400
mA
Base current
I
B
50
mA
Q2
(MOSFET)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
10
V
Drain current
I
D
50
mA
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
(Note 1)
100
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Pin Assignment
(top view)
Unit: mm
1.
2.
3.
4.
5.
6.
EMITTER
BASE
DRAIN
SOURCE
GATE
COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-2N1F
Weight: 0.003 g (typ.)
7A
Type Name
h
FE
Rank
6
5
4
1
2
3
Q1
Q2
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| HN7G02FU | TOSHIBA Multi Chip Discrete Device |
| HN7G03FU | Power Management Switch Applications |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HN7G01FE-A | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N Ic=-400mA Id=50mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HN7G01FE-A(TE85L,F | 功能描述:兩極晶體管 - BJT Vceo=-12V Vds=20V Ic=-400mA Id=50mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HN7G01FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi Chip Discrete Device |
| HN7G01FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Application |
| HN7G01FU-A | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N Ic=-400mA Id=50mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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