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參數(shù)資料
| 型號： | HN29WT800SERIES |
| 英文描述： | Bottom entry type connector, Two-piece connector; HRS No: 547-0093-6 00; No. of Positions: 22; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 9/43頁 |
| 文件大?。?/td> | 321K |
| 代理商： | HN29WT800SERIES |
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HN29W12811BP Series
9
Fifth bus cycle
Sixth bus cycle
Command
Bus
cycles
Operation
mode
Data in
Operation
mode
Data in
Read
Serial read (1) (Without CA)
3
(With CA)
3 + 2h*
6
Write
CA (2)*
5
Serial read (2)
3
Read identifier codes
1
Data recovery read
1
Auto erase
Single sector
4
Auto program Program (1)
(Without
CA*
7
)
4
(With CA*
7
)
4 + 2h*
6
Write
CA (2)*
5
Write
40H
*11, 12
Program (2)*
10
4
Program (3) (Control bytes)*
7
4
Program (4)
(WithoutCA*
7
) 4
(With CA*
7
)
4 + 2h*
6
Write
CA (2)
Write
40H
*11, 12
Reset
1
Clear status register
1
Data recovery write
Notes: 1. Commands and sector address are latched at rising edge of
WE
pulses. Program data is latched
at rising edge of SC pulses.
2. The chip is in the read status register mode when
RES
is set to V
IHR
first time after the power up.
3. Refer to the command read and write mode in mode selection.
4. SA (1) = Sector address (A0 to A7), SA (2) = Sector address (A8 to A12).
5. CA (1) = Column address (A0 to A7), CA (2) = Column address (A8 to A11).
(0
≤
A11 to A0
≤
83FH)
6. The variable h is the input number of times of set of CA (1) and CA (2) (1
≤
h
≤
2048 + 64).
Set of CA (1) and CA (2) can be input without limitation.
7. By using program (1) and (3), data can additionally be programmed maximum 15 times for each
sector before erase.
8. ID = Identifier code; Manufacturer code (07H), Device code (95H).
9. The manufacturer identifier code is output when
CDE
is low and the device identifier code is output
when
CDE
is high.
10.Before program (2) operations, data in the programmed sector must be erased.
11.No commands can be written during auto program and erase (when the RDY/
Busy
pin outputs a
V
OL
).
12.The fourth or sixth cycle of the auto program comes after the program data input is complete.
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29WT800T-10 | x8/x16 Flash EEPROM |
| HN29WT800T-12 | x8/x16 Flash EEPROM |
| HN29WT800T-8 | x8/x16 Flash EEPROM |
| HN2A01FUGR | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN2A01FUY | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29WT800T-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WT800T-12 | 制造商:Renesas Electronics Corporation 功能描述:8MB CMOS FLASH DINOR 1M*8 3.3V |
| HN29WT800T-8 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN2A01FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
| HN2A01FE-GR(TE85LF | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP -50V -0.15A ES6 |
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