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參數(shù)資料
| 型號： | HMC459 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 的GaAs PHEMT MMIC功率放大器，直流- 18.0千兆赫 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 258K |
| 代理商： | HMC459 |
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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1
HMC459
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
v00.0204
General Description
Features
+25 dBm P1dB Output Power
Functional Diagram
The HMC459 is a GaAs MMIC PHEMT Distrib-
uted Power Amplifier die which operates between
DC and 18 GHz. The amplifier provides 17 dB
of gain, +31.5 dBm output IP3 and +25 dBm of
output power at 1 dB gain compression while
requiring 290 mA from a +8V supply. Gain flat-
ness is good making the HMC459 ideal for EW,
ECM and radar driver amplifier applications. The
HMC459 amplifier I/O’s are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Gain: 17 dB
+31.5 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
Typical Applications
The HMC459 wideband driver is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Electrical Specifications,
T
A
= +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min
Typ
Max
Units
Frequency Range
DC - 2.0
DC - 6.0
DC - 10.0
DC - 18.0
GHz
Gain
16.5
18.5
15
18
14
17
9
12
dB
Gain Flatness
±0.5
±0.75
±0.75
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.03
0.04
0.035
0.045
dB/ °C
Input Return Loss
22
19.5
19
10
dB
Output Return Loss
27
15
14
14
dB
Output Power for 1 dB
Compression (P1dB)
21
24
20.5
24.5
22
25
14
17
dBm
Saturated Output Power (Psat)
26.5
26.5
26.5
21
dBm
Output Third Order Intercept (IP3)
40
34
31.5
26
dBm
Noise Figure
4.0
4.0
3.0
6.5
dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
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| HMC461LP3 | InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz |
| HMC462 | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HMC459_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
| HMC459_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
| HMC459-SX | 功能描述:IC MMIC PWR AMP DIE 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):在售 頻率:0Hz ~ 18GHz P1dB:25dBm 增益:17dB 噪聲系數(shù):3dB RF 類型:通用 電壓 - 電源:8V 電流 - 電源:290mA 測試頻率:- 封裝/外殼:模具 供應商器件封裝:模具 標準包裝:2 |
| HMC460 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
| HMC460_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
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