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參數(shù)資料
| 型號(hào)： | HMC442LM1 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 24 GHz |
| 中文描述： | GaAs PHEMT MMIC中功率放大器，17.5 - 24千兆赫 |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大小： | 233K |
| 代理商： | HMC442LM1 |
MICROWAVE CORPORATION
1 - 75
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
1
HMC442
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
v01.0304
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265
deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds
of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter
of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as
possible <0.31 mm (12 mils).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC442LM1_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 24.0 GHz |
| HMC442LM1_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 24.0 GHz |
| HMC442-SX | 功能描述:RF Amplifier IC General Purpose 17.5GHz ~ 24GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):有效 頻率:17.5GHz ~ 24GHz P1dB:20dBm 增益:13dB 噪聲系數(shù):7dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:85mA 測(cè)試頻率:17.5GHz ~ 21GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC443LP4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT GaAs HBT MMIC x4 ACTIVE FREQUENCY MULTIPLIER, 9.8 - 11.2 GHz OUTPUT |
| HMC443LP4_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT GaAs HBT MMIC x4 ACTIVE FREQUENCY MULTIPLIER, 9.8 - 11.2 GHz OUTPUT |
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