參數(shù)資料
型號: HM5112805F
廠商: Hitachi,Ltd.
英文描述: 128M EDO DRAM(128M 擴(kuò)展數(shù)據(jù)輸出模式動態(tài)RAM)
中文描述: 128M的內(nèi)存江戶(128M的擴(kuò)展數(shù)據(jù)輸出模式動態(tài)內(nèi)存)
文件頁數(shù): 13/34頁
文件大?。?/td> 466K
代理商: HM5112805F
HM5112805F-6, HM5113805F-6
13
Write Cycle
HM5112805F/HM5113805F
-6
Parameter
Symbol
Min
Max
Unit
Notes
Write command setup time
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
0
ns
14
Write command hold time
10
ns
Write command pulse width
Write command to
RAS
lead time
Write command to
CAS
lead time
10
ns
15
ns
10
ns
Data-in setup time
0
ns
15
Data-in hold time
10
ns
15
Read-Modify-Write Cycle
HM5112805F/HM5113805F
-6
Parameter
Symbol
Min
Max
Unit
Notes
Read-modify-write cycle time
RAS
to
WE
delay time
CAS
to
WE
delay time
Column address to
WE
delay time
OE
hold time from
WE
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
140
ns
79
ns
14
34
ns
14
49
ns
14
15
ns
Refresh Cycle
HM5112805F/HM5113805F
-6
Parameter
CAS
setup time (CBR refresh cycle)
CAS
hold time (CBR refresh cycle)
WE
setup time (CBR refresh cycle)
WE
hold time (CBR refresh cycle)
RAS
precharge to
CAS
hold time
Symbol
Min
Max
Unit
Notes
t
CSR
t
CHR
t
WRP
t
WRH
t
RPC
5
ns
10
ns
0
ns
10
ns
5
ns
相關(guān)PDF資料
PDF描述
HM5113805F 128 M EDO(Extended Data Output) DRAM(128M 擴(kuò)展數(shù)據(jù)輸出模式動態(tài)RAM)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5112805F-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805FLTD-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805FTD-5 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh
HM5112805FTD-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805LTD-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM