- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385327 > GS8640Z36GT-200V (GSI TECHNOLOGY) 72Mb Pipelined and Flow Through Synchronous NBT SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | GS8640Z36GT-200V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 36 ZBT SRAM, 7.5 ns, PQFP100 |
| 封裝： | ROHS COMPLIANT, TQFP-100 |
| 文件頁(yè)數(shù)： | 13/22頁(yè) |
| 文件大小： | 600K |
| 代理商： | GS8640Z36GT-200V |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)當(dāng)前第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage on V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to V
DD
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS8640Z18/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
13/22
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.7
1.8
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8640Z36GT-250IV | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z36GT-250V | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z36T-167IV | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z36T-200IV | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z36T-200V | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8640Z36GT-250 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 6.5NS/2.5NS 100TQFP - Trays |
| GS8640Z36GT-250IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 72MBIT 2MX36 6.5NS/3NS 100TQFP - Trays |
| GS8640Z36GT-250V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 72MBIT 2MX36 6.5NS/3NS 100TQFP - Trays |
| GS8640Z36GT-300 | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z36GT-300I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 5.5NS/2.3NS 100TQFP - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。