參數(shù)資料
型號(hào): GS82032GQ-150IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 64K X 32 CACHE SRAM, 9 ns, PQFP100
封裝: QFP-100
文件頁數(shù): 2/23頁
文件大?。?/td> 760K
代理商: GS82032GQ-150IT
Rev: 1.04 2/2001
10/23
2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Note: This parameter is sample tested.
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87.
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4. For x18 configuration, consult factory.
Capacitance
(TA = 25
oC, f = 1 MHZ, V
DD = 3.3 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
CI
VDD = 3.3 V
3
4
pF
Input Capacitance
CIN
VIN = 0 V
4
5
pF
Output Capacitance
COUT
VOUT = 0 V
6
7
pF
Package Thermal Characteristics
Rating
Layer Board
Symbol
TQFP Max
QFP Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
TBD
°C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
RΘJA
24
TBD
°C/W
1,2,4
Junction to Case (TOP)
RΘJC
9
TBD
°C/W
3,4
20% tKC
VSS-2.0V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD+-2.0V
50%
VDD
VIL
相關(guān)PDF資料
PDF描述
GS820V32GQ-5 64K X 32 CACHE SRAM, 5 ns, PQFP100
GS8321E18AD-333IT CACHE SRAM, PBGA165
GS832236AB-150VT 1M X 36 CACHE SRAM, 7.5 ns, PBGA119
GS8342D11BD-500IT 4M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8342D11BD-500 4M X 9 QDR SRAM, 0.45 ns, PBGA165
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS82032Q100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM
GS82032Q-100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K x 32 2M Synchronous Burst SRAM
GS82032Q100I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM
GS82032Q117 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM
GS82032Q-117 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K x 32 2M Synchronous Burst SRAM