參數(shù)資料
型號(hào)： GS816118
廠商： Electronic Theatre Controls, Inc.
元件分類： DRAM
英文描述： 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述： 1M×18，512k×32，512k×36 18M位同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 35/36頁(yè)
文件大?。?/td> 945K
代理商： GS816118
GS816118(T/D)/GS816132(D)/GS816136(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.13 11/2004
35/36
1999, GSI Technology
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
GS816118T-150IT 1.00 9/
1999A;GS816118T-150IT
2.00 1/1999B
Content
Converted from 0.25u 3.3V process to 0.18u 2.5V process.
Master File Rev B
Added x72 Pinout.
Added GSI Logo.
Changed pin description in TQFP to match order of pins in
pinout.
GS816118T 2.01 1/
2000C;GS816118 T 2.02 1/
2000D
GS18/362.0 1/2000DGS18/
362.03 2/2000E
Front page; Features - changed 2.5V I/O supply to 2.5V
or3.3V I/O supply; Core and Interface voltages - Changed
paragraph to include information for 3.3V;Completeness
Absolute Maximum Ratings; Changed VDDQ - Value: From: -
.05 to VDD : to : -.05 to 3.6; Completeness.
Recommended Operating Conditions;Changed: I/O Supply
Voltage- Max. from VDD to 3.6; Input High Voltage- Max. from
VDD +0.3 to 3.6; Same page - took out Note 1;Completeness
Electrical Characteristics - Added second Output High Voltage
line to table; completeness.
Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
Changed the value of ZZ recovery in the AC Electrical
Characteristics table on page 15 from 20 ns to 100 ns
GS18/362.03 2/200E;
816118_r2_04
Content
816118_r2_04;
816118_r2_05
Content/Format
Added 225 MHz speed bin
Updated Pg. 1 table, AC Characteristics table, and Operating
Currents table to match 815xxx
Updated format to comply with Technical Publications
standards
Updated Capitance table—removed Input row and changed
Output row to I/O
816118_2_05;
816118_r2_06
Content
816118_r2_06;
811618_r2_07
Content
Updated Features list on page 1
Completely reworked table on page 1
Updated Mode Pin Functions table on page 7
Added 3.3 V references to entire document
Updated Operating Conditions table
Updated Boundary Scan Chain table
Updated JTAG section
Added Pin 56 to Pin Description table
Updated Operating Currents table and added note
Update table on page 1; added power numbers
Updated Application Tips paragraph
Updated Synchronous Truth Table
Updated Operating Currents table
Updated table on page 1; updated power numbers
Updated Recommended Operating Conditions table (added
V
DDQ
references)
816118_r2_07;
811618_r2_08
Content
816118_r2_08;
811618_r2_09
Content
相關(guān)PDF資料
PDF描述
GS816118D 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816218BGD-150 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816236BGD-200I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816236BGD-250 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816236BGD-250I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816118BD-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 165FBGA - Trays
GS816118BD-150I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 165FBGA - Trays
GS816118BD-150IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 165FPBGA - Trays
GS816118BD-150V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 165FPBGA - Trays
GS816118BD-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays
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