- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄383019 > GS8150E18 (GSI TECHNOLOGY) 16Mb（1M x 18Bit）Synchronous Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) PDF資料下載
參數(shù)資料
| 型號(hào)： | GS8150E18 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（1M x 18Bit）Synchronous Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| 中文描述： | 16Mb的（100萬(wàn)x 18位）同步突發(fā)靜態(tài)存儲(chǔ)器（1,600位（100萬(wàn)× 18位）同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器）） |
| 文件頁(yè)數(shù)： | 22/26頁(yè) |
| 文件大?。?/td> | 516K |
| 代理商： | GS8150E18 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)當(dāng)前第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
22/26
2000, Giga Semiconductor, Inc.
Preliminary
GS8150E18/32/36T-225/200/180/166/150/133
Sleep Mode Timing Diagram
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally, but that are ended with the output
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually assures there
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on
dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address
boundary crossings), but greater care must be exercised to avoid excessive bus contention.
CK
ADSP
ADSC
tH
tKH tKL
tKC
tS
ZZ
tZZR
tZZH
tZZS
~
~
~
~
Snooze
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8150E32 | 16Mb（512K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| GS8150E36 | 16Mb（512K x 36Bit）Synchronous Burst SRAM(16M位（512K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| GS8150F18 | 16Mb（1M x 18Bit）Synchronous Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| GS8150F32 | 16Mb（512K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| GS8150F36 | 16Mb（512K x 36Bit）Synchronous Burst SRAM(16M位（512K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8150V18AB | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V18AB-250 | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V18AB-250I | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V18AB-300 | 制造商:GSI Technology 功能描述:GS8150V18AB-300 - Trays |
| GS8150V18AB-300I | 制造商:GSI Technology 功能描述:GS8150V18AB-300I - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。