參數(shù)資料
型號： GP400DDM12
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 功率晶體管
英文描述： Dual Switch IGBT Module Advance Information
中文描述： 400 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù)： 9/10頁
文件大?。?/td> 100K
代理商： GP400DDM12
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
8/10
Fig.13 Diode typical forward characteristics
Fig.14 Reverse bias safe operating area
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
0
100
200
300
400
500
600
700
800
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, VF - (V)
Forward
current,
I
F
-
(A)
Tj = 125C
Tj = 25C
0
100
200
300
400
500
600
700
800
900
1000
0
200
400
600
800
1000
1200
Collector-emitter voltage, Vce - (V)
Collector
current,
I
C
-
(A)
Tcase = 125C
Vge = ±15V
Rg = 5*
*Recommended minimum value
1
10
100
1000
10000
1
10
100
1000
10000
Collector-emitter voltage, Vce - (V)
Collector
current,
I
C
-
(A)
50
s
100
s
IC max. (single pulse)
I
C max.
DC
(continuous)
t
p
=
1ms
0.1
1
10
100
1
10
1000
100
10000
Pulse width, tp - (ms)
Transient
thermal
impedance,
Z
th
(j-c)
-
(
°C/kW
)
Diode
Transistor
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