參數(shù)資料
型號： GP400DDM12
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 功率晶體管
英文描述： Dual Switch IGBT Module Advance Information
中文描述： 400 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù)： 3/10頁
文件大小： 100K
代理商： GP400DDM12
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/10
THERMAL AND MECHANICAL RATINGS
Symbol
Conditions
DC junction to case
oC/kW
35
Max.
-
Min.
Parameter
Units
R
th(j-c)
Thermal resistance - transistor (per arm)
T
stg
Storage temperature range
Transistor
oC
150
125
-
–40
R
th(c-h)
Thermal resistance - Case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
8
-
Mounting - M6
Nm
5
-
oC/kW
T
j
Junction temperature
oC
Screw torque
Diode
oC
125
-
Electrical connections - M4
Nm
2
-
Electrical connections - M8
Nm
10
-
Thermal resistance - diode (per arm)
DC junction to case
oC/kW
70
-
R
th(j-c)
V
CES
Collector-emitter voltage
-
DC, T
case = 25C
600
Test Conditions
Symbol
I
C
Gate-emitter voltage
V
GE = 0V
1200
Units
V
±20
Max.
Parameter
T
case = 25C unless stated otherwise.
Collector current
3750
Maximum power dissipation
P
max
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Isolation voltage
V
isol
V
2500
V
GES
A
I
C(PK)
W
T
case = 25C (Transistor)
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
DC, T
case = 75C
400
A
1ms, T
case = 75C
A
800
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