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參數(shù)資料
| 型號： | GMRS6 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Giant Magneto Resistive Position Sensor |
| 中文描述： | 巨磁電阻位置傳感器 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 29K |
| 代理商： | GMRS6 |
GMR S6
Data Sheet
3
1999-04-01
Application Hints
The application mode of the GMR position sensor is preferably as a bridge or halfbridge
circuit. In every case this type of circuit compensates for the
T
C
of the resistance value
R
0
. To compensate for the
T
C
of the GMR effect
R
/
R
0
, if there is the necessity, is left to
the application circuit and can be done for example with a NIC circuit. When operated
over a complete 360
°
turn, a total signal of
≈
20 mV/V is achieved at 25
°
C with a
halfbridge. The output signal is doubled when a fullbridge circuit is used. In the case of
linear position sensing, the electrical circuit remains unchanged.
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Supply current
Thermal conductivity
Symbol
T
A
T
stg
I
1
G
thC
A
G
thC
C
H
rot
Value
– 40 … + 150
– 50 … + 150
5
> 2.2
> 5
< 15
Unit
°
C
°
C
mA
mW/K
mW/K
kA/m
Magnetic field
1)
1)
larger fields may reduce the magnetoresistive effect irreversibly
Characteristics (
T
A
= 25
°
C)
Parameter
Nominal supply current
Basic resistance
Magnetoresistive effect
H
rot
= 5 ... 15 kA/m
Temperature coefficient of
basic resistance
Temperature coefficient of
magnetoresistance
Temperature coefficient of
magnetoresistive effect
Hysteresis at
H
rot
= 10 kA/m
Symbol
I
1N
R
0
R
/
R
0
Value
4
> 700
≈
4
Unit
mA
%
TC
R0
+ 0.09 … + 0.12
%/K
TC
R
– 0.12 … – 0.09
%/K
TC
R/R0
– 0.27 … – 0.23
%/K
Hys
< 2
degrees
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